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Semiconductor Components Industries, LLC, 2006
May, 2006 ? Rev. 2
1
Publication Order Number:
NSDEMN11XV6T1/D
NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT?563 package which is designed for low power surface mount
applications, where board space is at a premium.
Features
?
Fast trr
?
Low CD
?
Pb?Free Packages are Available
MAXIMUM RATINGS
(TA
= 25
°C)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
80
Vdc
Peak Reverse Voltage
VRM
80
Vdc
Forward Current
IF
100
mAdc
Peak Forward Current
IFM
300
mAdc
Peak Forward Surge Current
IFSM
(Note 1)
2.0
Adc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation @TA
= 25
°C
Derate above 25°C
PD
357
(Note 2)
2.9
(Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
RJA
350
(Note 2)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation @TA
= 25
°C
Derate above 25°C
PD
500
(Note 2)
4.0
(Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
RJA
250
(Note 2)
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1
S
2. FR?4 @ Minimum Pad
http://onsemi.com
SOT?563
CASE 463A
PLASTIC
MARKING DIAGRAM
(1)
(2)
(3)
(4) (5) (6)
Device Package Shipping?
ORDERING INFORMATION
NSDEMN11XV6T1 SOT?563 4000/Tape & Reel
NSDEMN11XV6T5 SOT?563 8000/Tape & Reel
1
N9 M
1
N9 = Specific Device Code
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
NSDEMN11XV6T5G SOT?563
8000/Tape & Reel
(Pb?Free)
NSDEMN11XV6T1G SOT?563
4000/Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相关代理商/技术参数
NSDEMN11XV6T5 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
NSDEMN11XV6T5G 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad Common Cathode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
NSDEMP11XV6T1 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
NSDEMP11XV6T1/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Common Anode Quad Array Switching Diode
NSDEMP11XV6T1_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Common Anode Quad Array Switching Diode
NSDEMP11XV6T1G 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad Common Anode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
NSDEMP11XV6T5 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
NSDEMP11XV6T5G 功能描述:二极管 - 通用，功率，开关 80V 100mA Quad Common Anode RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube